发明名称 GENERATING MASK PATTERN FOR ALTERNATING PHASE-SHIFT MASK LITHOGRAPHY
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for generating a mask pattern for alternating phase-shift mask lithography. <P>SOLUTION: The method for generating patterns of a pair of photomasks from a data set defining a circuit layout to be realized on a substrate includes identifying critical segments of the circuit layout to be realized on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of the substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005037945(A) 申请公布日期 2005.02.10
申请号 JP20040207387 申请日期 2004.07.14
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 LIEBMANN LARS W;BUKOFSKY SCOTT J;GRAUR IOANA
分类号 G03F1/08;G03C3/02;G03C5/00;G03F1/00;G03F9/00;G06F17/50;H01L21/027 主分类号 G03F1/08
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