发明名称 |
CHEMICAL VAPOR DEPOSITION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition device which further improves uniformity of a film formed on a semiconductor substrate. SOLUTION: Two reaction chambers 3 are provided to a chamber of a chemical vapor deposition device. In each of the reaction chambers 3, a shower head 5 for blowing off a material gas and an oxidant and a stage part 7 for mounting a semiconductor substrate are arranged to face each other. A lift bellows 4 is provided to a rear side of the shower head 5 circumferentially. A driving part 6 is provided above the reaction chamber 3 for driving the lift bellows 4 thereof. The distance between the shower head 5 and the stage 7 is changed by expanding or contracting the lift bellows 4 by the driving part 6. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005039123(A) |
申请公布日期 |
2005.02.10 |
申请号 |
JP20030276108 |
申请日期 |
2003.07.17 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
KOBAYASHI KAZUO;OKAMOTO YOSHIHIKO |
分类号 |
C23C16/44;H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/44 |
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