| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is capable of preventing a platinum metal film from coming off in a manufacturing process without causing a reduction in capacitance, and to provide its manufacturing method. <P>SOLUTION: A silicon nitride film 21 is formed on a plug 30 and a silicon oxide 19, and a silicon oxide film 22 whose thickness is equal to or above the height (i.e. the height of a lower electrode) of a capacitor element C1 is deposited on the silicon nitride film 21. Then, the silicon oxide film 22 and the silicon nitride film 21 are subjected to dry etching to form through-holes 23 and dummy through-holes 23a and 23b. The dummy through-holes 23a are arranged so as to surround all the through-holes 23 or a memory cell array region. The dummy through-holes 23b are arranged so as to divide all the through-holes 23 with rows and columns spaced at a prescribed interval. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
