Atomic layer deposition of metal during the formation of a semiconductor device

摘要

A method for forming a metal layer over a semiconductor wafer substrate assembly using atomic layer deposition (ALD) comprises exposing the surface of the wafer substrate assembly to a precursor gas to form a precursor layer over the surface of the wafer substrate assembly. Next, the precursor layer is exposed to a reducing gas which converts the precursor layer to a metal layer. One particular embodiment proposes the use of cyclopentadienylcobalt dicarbonyl as the precursor gas and hydrogen as the reducing gas to form a cobalt layer over the wafer surface.