发明名称 |
Doping apparatus, doping method, and method for fabricating thin film transistor |
摘要 |
It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
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申请公布号 |
US2005032341(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040910623 |
申请日期 |
2004.08.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOEZUKA JUNICHI;YAMADE NAOTO |
分类号 |
H01L21/66;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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