发明名称 High-voltage CMOS-compatible capacitors
摘要 A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
申请公布号 US2005030702(A1) 申请公布日期 2005.02.10
申请号 US20040931582 申请日期 2004.09.01
申请人 发明人 DIORIO CHRISTOPHER J.;BERNARD FREDERIC J.
分类号 H01L27/08;(IPC1-7):H01G4/38 主分类号 H01L27/08
代理机构 代理人
主权项
地址