发明名称 |
High-voltage CMOS-compatible capacitors |
摘要 |
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
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申请公布号 |
US2005030702(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040931582 |
申请日期 |
2004.09.01 |
申请人 |
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发明人 |
DIORIO CHRISTOPHER J.;BERNARD FREDERIC J. |
分类号 |
H01L27/08;(IPC1-7):H01G4/38 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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