| 摘要 |
Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction [011] or [0-1-1] from the plane (100) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of AlxGa1-xAs (0<=x<=1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of AlyGazIn1-y-zP (0<=y<=1, 0<=z<=1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.
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