HIGH FREQUENCY CONTROL OF A SEMICONDUCTOR SWITCH

摘要

Resonant gate driver circuits provide for an efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate drive circuit is performed. This allows for a highly energy efficient and fast operation of the MOSFET.