SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can be mass-produced easily through a simple manufacturing process and is high in reliability and reproducibility. SOLUTION: In a method of manufacturing a bottom gate type thin film transistor, an amorphous semiconductor film 106 is formed on an insulating film 102 and the film 106 is transformed into a crystalline semiconductor film 108 by applying a solution 107 containing a catalytic element which promotes the crystallization of the film 106 to the film 106, or adding the catalytic element to the film 106 and heat-treating the film 106. Then the concentration of the catalytic element is moved to a conductive layer provided in the semiconductor film 108 through heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI