发明名称 ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE
摘要 PROBLEM TO BE SOLVED: To provide an active matrix substrate capable of making a manufacturing process efficient thereby reducing a manufacturing cost and capable of realizing enhancement of display quality while making pixel high in fineness, and to provide a display device equipped with the active matrix substrat. SOLUTION: A thin film transistor 30 and a storage capacitor 70 connected to the thin film transistor are provided in a pixel region 41 of the active matrix substrate. The thin film transistor 30 is equipped with a channel region provided on a semiconductor layer 42 and gate electrode parts 32, 33 facing the channel region via an insulating film. A back gate wiring line 15b, which functions as a light shielding film and a back gate electrode part, and a capacitor electrode part 15a, which is the electrode of the storage capacitor 70, are formed on the side opposed to the gate electrode parts 32, 33 with the semiconductor layer 42 between. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005037741(A) 申请公布日期 2005.02.10
申请号 JP20030275450 申请日期 2003.07.16
申请人 SEIKO EPSON CORP 发明人 KITAGAWA ATSUSHI
分类号 G02F1/1368;G09F9/30;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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