发明名称 COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM, AS WELL AS MANUFACTURING METHOD OF FERROELECTRIC THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition for ferroelectric film formation and a ferroelectric film, as well as its manufacturing method wherein the occurring of a striation is effectively prevented and the selection range for sol compositions can be broadened. <P>SOLUTION: In the composition for ferroelectric film formation containing a metal compound which is a material to form the ferroelectric thin film, this is provided with a hydrophobic compound which has a reactive group to react with a hydroxyl group, and in which at least the end part side out of the remaining part excluding the reactive group is made to have hydrophobic property. By this, the selections for the sol compositions can be broadened while the occurrence of the striation is effectively suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005038830(A) 申请公布日期 2005.02.10
申请号 JP20040155242 申请日期 2004.05.25
申请人 SEIKO EPSON CORP 发明人 SUMI KOJI
分类号 C04B35/622;B41J2/16;C01G25/00;C01G99/00;C23C18/12;H01B3/10;H01B3/20;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/318;H01L41/39 主分类号 C04B35/622
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