发明名称 SOUND DETECTION MECHANISM
摘要 PROBLEM TO BE SOLVED: To reasonably configure a sound detection mechanism in which a diaphragm and a back electrode can be made on a substrate by a simple process, and stress control can be done easily for the back electrode, and the back electrode can be formed accurately without using an expensive wafer such as an SOI. SOLUTION: An acoustic holes constituting a through hole Ba is formed on the front surface side of a substrate A. At the front surface side, a second protecting film 406, a sacrifice layer D (407), and a metal film 408 are laminated for the parts of the acoustic hole. An acoustic aperture E is formed by performing etching for a depth up to the acoustic hole from a rear surface side of the substrate A. Then etching is conducted through the acoustic hole from the rear surface side of the substrate to remove the sacrifice layer 407, in order to form an air gap region F made of the metal film 408 between the diaphragm C and the substrate A. In addition, the through hole Ba is formed, and the remaining sacrifice layer 407 after etching is employed as a spacer D for keeping a distance between the back electrode B and the diaphragm C. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005039652(A) 申请公布日期 2005.02.10
申请号 JP20030276009 申请日期 2003.07.17
申请人 HOSIDEN CORP;TOKYO ELECTRON LTD 发明人 KOMAI MASATSUGU;KAGAWA KENICHI;OBAYASHI YOSHIAKI;YASUDA MAMORU;SAEKI SHINICHI
分类号 H04R19/04;H04R19/00;H04R31/00;(IPC1-7):H04R19/04 主分类号 H04R19/04
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