| 摘要 |
PROBLEM TO BE SOLVED: To provide a low noise amplifier employing a high dielectric loss substrate that can use an inexpensive substrate material and has high performance at a low cost. SOLUTION: The impedance of an input section of a HEMT (high electron mobility transistor) is matched not by using a microstrip line but by employing a wire 7 such as a gold plated wire in a floated state from the high dielectric loss substrate 2. Then, an elliptic hole 8 is formed in the substrate at a corresponding position so as to avoid a gate of the HEMT 1 from being in contact with the board 2 thereby floating the gate G from the board 2. Further, the length of the wire 7 is selected to be a length whereby an input parameter S11 and aΓopt of the HEMT 1 can be matched. COPYRIGHT: (C)2005,JPO&NCIPI
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