| 摘要 |
In a wide gap semiconductor device of SiC or the like used at a temperature equal to or higher than 150 degrees centigrade, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high polymer, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional structure by using a covalent bond, which is caused by addition reaction, to couple together organosilicon polymers C prepared by using siloxane bonding to couple one or more types of organosilicon polymers A having a bridged structure using siloxane (Si-O-Si bond) with one or more types of organosilicon polymers B having a linear coupling structure using siloxane. |
