发明名称 Photomask, exposure control method and method of manufacturing a semiconductor device
摘要 A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180�.
申请公布号 US2005030502(A1) 申请公布日期 2005.02.10
申请号 US20040874192 申请日期 2004.06.24
申请人 FUJISAWA TADAHITO;INOUE SOICHI;TANAKA SATOSHI;ASANO MASAFUMI 发明人 FUJISAWA TADAHITO;INOUE SOICHI;TANAKA SATOSHI;ASANO MASAFUMI
分类号 G03F1/08;G03B27/42;G03F1/14;G03F1/26;G03F1/38;G03F1/44;G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):G03B27/42 主分类号 G03F1/08
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