| 摘要 |
A field effect transistor is provided in which a drain current is not influenced by fluctuation of a gate voltage. In order to set the transistor in an on state (conductive state), a voltage equal to or more than a threshold voltage is applied to an inversion layer formation region (19) via a gate electrode (12) to thereby form an inversion layer. Charge inducted by the inversion layer moves to a channel region (18) and make the Fermi level of the channel region (18) fluctuate, and then, a potential barrier between a source region (16) and the channel region (18) is lowered. As a result, carriers can climb over the barrier and move from the source region (16) to a drain region (17), and thus, a drain current flows. |
