| 摘要 |
PROBLEM TO BE SOLVED: To enable the electrical properties of a transistor to be improved in uniformity and reliability. SOLUTION: A part of a gate insulating film is formed through an application method when manufacturing a bottomed gate transistor. At this point, the size of a gate electrode where a coating film is formed is set optimal corresponding to the physical properties of a coating liquid, a coating condition, and the desired thickness of the coating film. COPYRIGHT: (C)2005,JPO&NCIPI |
