发明名称 |
Manufacturing method for semiconductor device, semiconductor device, and electronic apparatus |
摘要 |
A manufacturing method for a semiconductor device includes a hole portion formation step for forming hole portions whose entire width is substantially identical to the width of the opening portion in a part of the active surface side of the substrate on which electronic components are formed, a curved surface formation step for curving the bottom surface of the hole portion while maintaining the width of the bottom surface in the hole portions substantially identical to the width of the opening portion, a connecting terminal formation step for forming connecting terminals that serve as the external electrodes of the electronic circuits by burying metal in the hole portions, and an exposure step for exposing a part of the connecting terminals by carrying out processing on the back surface of the substrate.
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申请公布号 |
US2005029630(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040774362 |
申请日期 |
2004.02.06 |
申请人 |
MATSUO YOSHIHIDE |
发明人 |
MATSUO YOSHIHIDE |
分类号 |
H01L23/52;H01L21/306;H01L21/3065;H01L21/308;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L29/04;H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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