| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer.
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| 申请公布号 |
US2005029531(A1) |
申请公布日期 |
2005.02.10 |
| 申请号 |
US20040912142 |
申请日期 |
2004.08.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAYAMA HISASHI;UEDA TETSUZO;YURI MASAAKI;TAKIZAWA TOSHIYUKI |
| 分类号 |
H01L21/84;H01L27/12;H01L29/778;H01L31/09;H01L33/08;H01S5/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/84 |
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