| 发明名称 |
METHOD FOR SLOWING DOWN DOPAND DIFFUSION IN SEMICONDUCTOR SUBSTRATES AND DEVICES FABRICATED THEREFROM |
| 摘要 |
<p>A method (and resulting structure) of forming a semiconductor device, includes implanting, on, a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.</p> |
| 申请公布号 |
WO2005013344(A1) |
申请公布日期 |
2005.02.10 |
| 申请号 |
WO2004EP51588 |
申请日期 |
2004.07.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;LEE, KAM-LEUNG;ZHU, HUILONG |
发明人 |
LEE, KAM-LEUNG;ZHU, HUILONG |
| 分类号 |
H01L21/336;H01L21/265;H01L21/324;H01L29/10;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
| 代理机构 |
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