| 摘要 |
FIELD: electrical equipment. ^ SUBSTANCE: face side of semiconductor wafer whose structure has n-Ge substrate, n-GsAs buffer layer, n-GsAs base layer, p-GsAs emitter layer, p+-GsAlAs large-gap layer, and p+-GsAs contact layer is covered with silicon dioxide layer. Contact metallization layer is evaporated on rear side of wafer. Protective photoresist layer is formed on silicon dioxide layer and rear contact is built up by electrochemical deposition. Photoresist mask with windows is made upon removal of photoresist above contact regions of photoelectric converter. Then silicon dioxide layer is etched in windows and chromium metal contact layers are alternately evaporated. Upon producing photoresist mask with contact pattern contacts are built up by electrochemical deposition of silver and protective layer of nickel. Upon removal of photoresist evaporated layers of contact metallization are removed by ion-beam etching, wafers are given heat treatment, and photoresist mask with window pattern over photoelectric converter perimeter is formed. Then silicon dioxide layer is removed from windows and gallium arsenide layers are etched to expose germanium substrate. Silicon dioxide layer is removed upon removal of photoresist and antireflecting coating is applied upon etching p+-GsAs beyond contact regions. ^ EFFECT: improved quality of face contacts due to adhesion, reduced contact resistance and noble metal consumption. ^ 1 cl, 8 dwg |
