| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode having good static electricity breakdown voltage by eliminating the generation of the local avalanche breakdown phenomenon when a backward direction static electricity surge is applied. SOLUTION: A p-type impurity diffusion region 12 of high concentration which becomes an anode and an n-type impurity diffusion region 13 of high concentration which becomes a cathode enclosing the p-type impurity diffusion region 12 are formed on the surface of an n-type silicon well region 11. The surface of the n-type silicon well region 11 wherein the impurity diffusion regions 12, 13 are formed is covered with a layer insulation film 15, and a metallic wiring layer 21 extended to a boundary line of the n-type impurity diffusion region 13 is formed thereon and is electrically connected to the p-type impurity diffusion region 12. Consequently, when reverse static electricity surge is applied, a uniform p-type inversion layer IP is formed in an isolation region between the impurity diffusion regions 12, 13 and local avalanche breakdown phenomenon is not generated. COPYRIGHT: (C)2005,JPO&NCIPI
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