| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which includes a semiconductor light emitting device protection layer which protects the semiconductor light emitting device against external force and easily fixes it. <P>SOLUTION: The semiconductor light emitting device is formed of a group III nitride-based compound semiconductor expressed by AlxGayIn1-x-yN, where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1, and comprises at least the semiconductor light emitting device protection layer for protecting the semiconductor light emitting device against external force, p-type semiconductor layer, active layer having a light emitting region, n-type semiconductor layer, and transparent electrode, which are formed in this order. A method of manufacturing the semiconductor light emitting device is also provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
