EEPROM ELEMENT HAVING SELECTIVE TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an EEPROM element having a selective transistor and a method for manufacturing the same. SOLUTION: The element comprises an element isolation film for defining a plurality of parallel active regions, a pair of control gate patterns arranged so as to intersect the active region, and a pair of selective gate patterns arranged so as to intersect the active region and to be between the control gate patterns in parallel thereto. A floating gate pattern is formed in a region in which the active region and the control gate pattern intersect. In the region in which the active region and the selective gate pattern intersect, a lower gate pattern is formed. An inter-gate dielectric layer pattern is interposed between the control gate pattern and the floating gate pattern and a dummy dielectric film pattern is interposed between the selective gate pattern and the lower gate pattern. The dummy dielectric film pattern is parallel to the selective gate pattern and self-aligned with one sidewall of the selective gate pattern and overlapped with the selective gate pattern by an amount corresponding to a predetermined width. COPYRIGHT: (C)2005,JPO&NCIPI