发明名称 Polynorbornene foam insulation for integrated circuits
摘要 Methods of providing foamed polynorbomene insulating material for use with an integrated circuit device, as well as apparatus and systems making use of such foamed polynorbomene insulating materials. The methods include forming a layer of polynorbomene material and converting at least a portion of the layer of polynorbomene material to a foamed polynorbomene material, such as by exposing the layer of polynorbomene material to a supercritical fluid. The foamed polynorbomene material can provide electrical insulation between conductive layers of the integrated circuit device.
申请公布号 US2005029663(A1) 申请公布日期 2005.02.10
申请号 US20040929632 申请日期 2004.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 FARRAR PAUL A.
分类号 H01L21/312;H01L21/316;H01L21/8242;H01L21/8244;H01L23/31;H01L23/532;(IPC1-7):H01L23/52 主分类号 H01L21/312
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