| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material, of a chemically amplified type in particular, for use in lithography with a high-energy light source in particular, having a practically sufficient level of etching resistance, excellent in adhesion to a substrate and in affinity with the developing solution, much higher than conventional materials in sensitivity and in resolution performance, and swelling less during the developing process. <P>SOLUTION: The polymer contains at least the repeating units of the compound described by formula (1), and the resist material, of the chemically amplified type in particular, contains the polymer as the base resin. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
