PHOTORESIST COMPOSITION FOR DEEP UV AND IMAGING PROCESS THEREOF

摘要

The present invention relates to a novel photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-300 nm, and a process for using it. The photoresist composition comprises: a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and further where the polymer comprises at least one alicyclic hydrocarbon unit, at least one cyclic anhydride, at least one acrylate unit with the structure (1), and at least one acrylate unit with structure (2): where, R' and R are independently H or (C1-C4)alkyl; R1 is a pendant cyclic lactone, and, R2 is a pendant nonlactone aliphatic hydrocarbon moiety, b) a compound or a mixture of compounds capable of producing acid upon irradiation. The invention further relates to the use of a solvent comprising valerolactone as a solvent for photosensitive materials. Preferably, the solvent is gamma valerolactone. The solvent may be in a mixture with another photoresist solvent or solvents.