A SEMICONDUCTOR DEVICE HAVING AN ORGANIC ANTI-REFLECTIVE COATING (ARC) AND METHOD THEREFOR

摘要

In a making a semiconductor device (10), a patterning stack above a conductive material (16) that is to be etched has a patterned photoresist layer (22) that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer (20). The TEOS layer (20) is deposited at a lower temperature than is conventional. The low temperature TEOS layer (20) is over an organic anti-reflective coating (ARC) (18) that is over the conductive layer (16). The low temperature TEOS layer (20) provides adhesion between the organic ARC (18) and the photoresist (22), has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC (18), to reduce undesired reflection.