| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique which can satisfactorily fill up a deep trench for forming a trench-shaped isolating region without forming a recess on the trench. <P>SOLUTION: This isolation structure comprises deep trenches 5a for forming isolating regions in a semiconductor substrate 1a, buried insulating films 5b1 each of which is formed in each deep trench 5a and has a cavity 5c therein, shallow trenches 5a1 each of which is composed of a sidewall surface of each deep trench 5a and an upper surface of each buried insulating film 5b1, and buried insulating films 5b2 formed on the buried insulating films 5b1 in the shallow trenches 5a1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
