| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide cerium oxide abrasive for polishing the surface of an SiO<SB>2</SB>insulating film, or the like, at high speed without damaging. <P>SOLUTION: An Si wafer on which an SiO<SB>2</SB>insulating film is formed by the TEOS-CVD method, or the like, is polished with cerium oxide abrasive containing cerium oxide having specific surface area of 10-40 m<SP>2</SP>/g measured by the BET method using such cerium carbonate as the primary particle size of 3-60μm occupies 90 vol% or more and the central particle size of aggregated particles is 20-100μm as a material, and containing slurry where cerium oxide particles having a central particle size of 150-600 nm are diffused into a medium. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
