| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device reducible in writing voltage, having a large capacity, and operable at high speed. SOLUTION: This nonvolatile semiconductor memory device has a floating gate 13 formed on a semiconductor substrate 11 through a gate insulating film 12, diffusion layers 14 which are formed in the substrate 11 and positioned on both sides of the floating gate 13 so that each of them functions as a source region or a drain region, first and second control gates 16 which are formed on both sides of floating gate 13 and drive the floating gate 13, a memory cell having intergate insulating films 15 formed between the first and second control gates 16 and the floating gate 13, selection gates 19 formed on the substrate 11 through gate insulating films 18, and a memory cell selection transistor having diffusion layers 20 which are formed in the substrate 11 and positioned on both sides of the selection gates 19 so that each of them functions as a source region or a drain region and that one of them is connected to one diffusion layer 14 of the memory cell. COPYRIGHT: (C)2005,JPO&NCIPI
|
