| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor wafer and the manufacturing method of the same, having a strained Si layer, reduced in a dislocation defect density, and excellent in crystallinity. SOLUTION: The semiconductor wafer is provided with at least a silicon single crystal substrate, an SiGe layer grown on the silicon single crystal substrate through epitaxial growth, and the Si layer grown on the SiGe layer through epitaxial growth. The manufacturing method of the semiconductor wafer comprises a process wherein the porous Si layer is formed by making the semiconductor wafer obtained by making the surface layer of the silicon single crystal substrate, and/or the SiGe layer porous, and at least the surface layer of the silicon single crystal substrate are made porous, then, heat treatment for smoothing the surface of the formed porous Si layer is effected, and the SiGe layer is grown on the smoothed surface of the porous Si layer through epitaxial growth to grow the Si layer on the surface of the grown SiGe layer through epitaxial growth. COPYRIGHT: (C)2005,JPO&NCIPI
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