发明名称 |
Electron affinity engineered VCSELs |
摘要 |
A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
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申请公布号 |
US2005031011(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040767920 |
申请日期 |
2004.01.29 |
申请人 |
BIARD JAMES R.;JOHNSON RALPH H.;JOHNSON KLEIN L. |
发明人 |
BIARD JAMES R.;JOHNSON RALPH H.;JOHNSON KLEIN L. |
分类号 |
H01S5/028;H01S5/042;H01S5/183;H01S5/20;H01S5/42;(IPC1-7):H01S3/08;H01S5/00 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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