| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron-beam drewing system and method which can achieve the large improvement of its throughput in the technical field of an electron-beam drewing. <P>SOLUTION: The electron-beam drewing system is the one for drewing patterns on the resist present on a semiconductor substrate by electron beams. The parallel electron beams 15 are emitted from an electron-beam source 14, and are projected on a mask 30 having pattern-form apertures which is disposed in the paths of the electron beams 15. At the same time, the electron beams 15 are so deflected by beam deflecting means as to draw the substrate 40 disposed in the paths of the electron beams 15 and the mask 30 on whose surface the layer of an electron-beam-sensitive resist is formed. The electron-beam current flowing at this time is set to 5-100μA. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
