METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND WIRING BOARD

摘要

PROBLEM TO BE SOLVED: To suppress generation of gas from an organic insulating film generated in a manufacturing process of a wafer level CSP.

SOLUTION: A method for manufacturing a semiconductor device includes a step of constituting two insulating films (photosensitive polyimide resin film 5 and uppermost layer protective film 12) sandwiching Cu wiring 2 of photosensitive resin insulating material. The uppermost layer protective film 12 uses a material (a low temperature cured resin) cured at a lower temperature than the photosensitive polyimide resin film 5 of a lower layer so that a curing time temperature may not exceed a temperature when the photosensitive polyimide resin film 5 of the lower layer is cured. Thus, since the generation of the gas from the photosensitive polyimide resin film 5 of the lower layer is suppressed when the uppermost layer protective film 12 is cured, a failure can be reduced in which the gas is stored in an interface between a Cu wiring 2 and the photosensitive polyimide film 5 to cause bulging to occur.

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