发明名称 |
Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells |
摘要 |
A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.
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申请公布号 |
US2005032374(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040837491 |
申请日期 |
2004.04.30 |
申请人 |
STMICROELECTRONICS S.R.L.;OVONYX INC. |
发明人 |
SPANDRE ALESSANDRO |
分类号 |
C23F4/00;H01L45/00;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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