发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
摘要 |
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.
|
申请公布号 |
US2005032318(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040943661 |
申请日期 |
2004.09.16 |
申请人 |
CHAU ROBERT;ARGHAVANI REZA;DOCZY MARK |
发明人 |
CHAU ROBERT;ARGHAVANI REZA;DOCZY MARK |
分类号 |
H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|