| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The semiconductor device has a low-resistance layer provided under the interconnection extending from the signal input to a gate of MOSFET. The low-resistance layer decreases the substrate resistance and the noise characteristic of the semiconductor device can also be improved. The low-resistance layer can be provided on a surface of the substrate or a polysilicon interconnection.
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| 申请公布号 |
US2005032315(A1) |
申请公布日期 |
2005.02.10 |
| 申请号 |
US20040929782 |
申请日期 |
2004.08.31 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MORIFUJI EIJI |
| 分类号 |
H01L21/3205;H01L21/00;H01L21/336;H01L21/8234;H01L23/52;H01L27/01;H01L27/04;H01L27/088;H01L29/06;H01L29/10;H01L29/40;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/3205 |
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