| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of improving the light-emitting property of a 3-5 group compound semiconductor when the semiconductor is temporarily taken out from a reactor and then grown again in the reactor. <P>SOLUTION: In the method of improving the light-emitting property of the 3-5 group compound semiconductor, a 3-5 group compound has a semiconductor layer not doped with a p-type dopant and a semiconductor layer doped with the p-type dopant and is expressed by a general formula of In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (x + y + z = 1, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1). In this method, (1) the former semiconductor layer is first grown in the reactor by using metal-organic chemical vapor deposition, (2) the semiconductor layer is taken out from the reactor, and after a while, (3) the semiconductor layer is put into the reactor or a reactor different from the reactor to grow the latter semiconductor layer on the former semiconductor layer. In this manufacturing, before the latter semiconductor layer is grown, (4) the former semiconductor layer is held in an atmosphere of ammonia at 500 to 1300 °C. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
