| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that, when a laser beam having higher harmonic waves is used for crystallizing a semiconductor film, the energy conversion efficiency of the higher harmonics is lower than that of the fundamental wave and, since the laser beam transformed into the higher harmonic waves is low in energy as compared with the laser beam having the fundamental wave, it becomes difficult to increase the throughput by widening the area of the beam spot. <P>SOLUTION: The laser beam irradiation device simultaneously projects a laser beam having a fundamental wave, and another laser beam having a wave of a wavelength equal to or shorter than that of the fundamental wave, typically, the higher harmonic waves transformed from the fundamental wave. The device projects the laser beams having the fundamental wave and the wave of the wavelength equal to or shorter than that of the fundamental wave emitted from one resonator without separating the laser beams from each other. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
