| 摘要 |
PROBLEM TO BE SOLVED: To improve the variations of the line width over the entire surface of a wafer with respect to a slimming manufacturing method and a slimming method for slimming the line width formed on the wafer. SOLUTION: The method has a first exposure step of repeating exposure of the entire part or one part of a region of a pattern to be slimmed on a resist-applied wafer, a first ion slimming step of performing ion slimming after development, a second exposure step of repeating exposure of the entire part or only one part of the region of the pattern of a predetermined shot after removing the resist and applying resist on the entire surface of the wafer, a second ion slimming step of performing ion slimming on the entire surface of the wafer after development, and a step of removing the resist. COPYRIGHT: (C)2005,JPO&NCIPI |
