UNSATURATED OXYGENATION FLUOROCARBON FOR SELECTIVE ANISOTROPY ETCHING USE

摘要

PROBLEM TO BE SOLVED: To provide a dielectric material relating to the photoresist mask which can simultaneously exhibit higher etching selectivity and speed. SOLUTION: A mixture for etching dielectric material from lamination substrate and a material including the mixture. More specifically, in one embodiment, the mixture containing unsaturated oxygenation fluorocarbons for etching the dielectric material of the laminated substrate is provided. The mixture can touch the laminated material containing the dielectric material under sufficient condition so that it may at least partially react and remove at least one portion of the dielectric material. In another embodiment, the method of manufacturing the unsaturated oxygenation fluorocarbon is provided. COPYRIGHT: (C)2005,JPO&NCIPI