| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminated substrate whose degree of freedom on element design is large and whose option on element manufacture can be enlarged. SOLUTION: The laminated substrate is provided with a single crystal substrate of Si or SiGe or Ge, an oxide interlayer which is epitaxially-grown on the single crystal substrate, and a GaAs layer which is epitaxially grown on the oxide interlayer. At least one layer in the oxide interlayer includes at least one metallic element in Li, Be, Mg, Ca, Ba, Sc, Y, La, Ce, Nd, Sm, Eu, Tm, Yb, Al, Th, and Ta. In at least one crystalline plane of a crystal lattice in the oxide interlayer, a square formed of the atomic arrangement of one type in constituent elements is matched with atom arrangement on the surface of a basic single crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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