| 摘要 |
PROBLEM TO BE SOLVED: To provide an HBT epitaxial wafer structure which is capable of enhancing the withstand voltage of a collector layer without varying a film thickness and a carrier concentration. SOLUTION: A GaAs sub-collector layer 2, a GaAs collector layer 3, a GaAs base layer 5, and an emitter layer 6 of AlGaAs or InGaP are successively formed and laminated on a semi-insulating substrate 1 to form the hetero-junction bipolar transistor. The collector layer 3 is wholly or partially formed of a layer 4 of AlInP having a wider band gap than GaAs to enhance a withstand voltage possessed by the collector layer. COPYRIGHT: (C)2005,JPO&NCIPI
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