ETCHING END POINT DETECTING METHOD, ETCHING MONITORING APPARATUS, AND PLASMA ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve an etching end point detecting pattern in degree of freedom of design and to provide an etching end point detecting method capable of accurately detecting an etching end point. SOLUTION: A mask where a plurality of etching end point detecting patterns consisting of an opening area and a mask area are drawn together with an etching pattern is provided on the silicon wafer when etching pits are formed on a silicon wafer (or, a film formed on the wafer) by etching, the etching end point detecting patterns are irradiated with a laser beam, and an etching end point is detected (steps 200 to 218) on the basis of an intensity change in the reflected laser beam from the etching end point detecting patterns. COPYRIGHT: (C)2005,JPO&NCIPI