| 摘要 |
The present invention aims to provide a miniaturized semiconductor device at low-cost having high integration density and for restraining an increase of an insertion loss and a deterioration of an isolation characteristic of a circuit resulting from parasitic inductance of gold wires, the semiconductor device comprising a control semiconductor chip 110, a switch circuit semiconductor chip 111, a substrate 410, external terminals 113, gold wires 210 and MIM capacitors 120 and 430, the control semiconductor chip 110 controlling a high frequency signal processing by the switch circuit semiconductor chip 111, the switch circuit semiconductor chip 111 being mounted on the control semiconductor chip 110 and processing the high frequency signal, the substrate 410 being on which the control semiconductor chip 110 is mounted, the external terminals 113 being interfaces with outside, the gold wires 210 connecting among the control semiconductor chip 110, the switch circuit semiconductor chip 111 and the external terminals 113, and the MIM capacitors 120 and 430 being formed on the control semiconductor chip 110 and the inside of the substrate 410 and processing the high frequency signal.
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