发明名称 |
Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
摘要 |
<p>An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the polymer comprising at least two carboxylic acid functionalities, a pH of less than or equal to 4 and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.</p> |
申请公布号 |
EP1505134(A1) |
申请公布日期 |
2005.02.09 |
申请号 |
EP20040254468 |
申请日期 |
2004.07.27 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
LIU, ZHENDONG |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/321;(IPC1-7):C09G1/00;C09G1/04 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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