The apparatus has a nozzle plate (1) which produces a hydrodynamic vacuum between the nozzle plate and a semiconductor wafer using nozzles (5). At least one suction hole (6) additionally sucks the semiconductor wafer to the nozzle plate. The suction hole is provided in the middle of the nozzle plate. Additional suction holes may be provided around the edge of the nozzle plate. The nozzle plate has a height of 2 to 3 mm.
