| 摘要 |
A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.
|
