| 摘要 |
A semiconductor device in which an electrode is not allowed to easily deform even when a heat treatment is performed on a material forming the electrode during a damascene process for forming a stacked capacitor, and a manufacturing method thereof are provided. A conductive film 5 made of the same material as that of a capacitor lower electrode 6 is formed so as to be adhered to a top face of a conductive film 4 by a heat treatment. If the lower electrode 6 is made of a noble metal such as ruthenium, for example, the conductive film 5 is made of the same noble metal. Because of use of the same material for forming the conductive film 5 and the lower electrode 6, connection between the conductive film 5 and the lower electrode 6 is strengthened. Accordingly, it is easy to maintain connection between the conductive film 5 and the lower electrode 6 during a heat treatment on the lower electrode 6, so that the lower electrode is not likely to deform. For this reason, connection between the conductive plug 4 and the lower electrode 6 can be made more reliable than a structure in which the lower electrode 6 is connected directly to the conductive plug 4.
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